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IRFB812PBF 6/23/11 www.irf.com 1 hexfet power mosfet to-220ab features and benefits ?
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applications ? "# ? $ # ? "% pd -97693 v dss r ds(on) typ. trr typ. i d 500v 1.75 75ns 3.6a s d g notes through are on page 2 absolute maximum ratings parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 3.6 i d @ t c = 100c continuous drain current, v gs @ 10v 2.3 a i dm pulsed drain current 14.4 p d @t c = 25c power dissipation 78 w linear derating factor 0.63 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 32 v/ns t j operating junction and -55 to + 150 t stg storage temperature range c soldering temperature, for 10 seconds 300 (1.6mm from case ) mounting torque, 6-32 or m3 screw diode characteristics symbol parameter min. typ. max. units conditions i s continuous source current ??? ??? 3.6 mosfet symbol (body diode) a showing the i sm pulsed source current ??? ??? 14.4 integral reverse (body diode) p-n junction diode. v sd diode forward voltage ??? ??? 1.2 v t j = 25c, i s = 3.6a, v gs = 0v t rr reverse recovery time ??? 75 110 ns t j = 25c, i f = 3.6a ??? 94 140 t j = 125c, di/dt = 100a/ s q rr reverse recovery charge ??? 135 200 nc t j = 25c, i s = 3.6a, v gs = 0v ??? 220 330 t j = 125c, di/dt = 100a/ s i rrm reverse recovery current ??? 3.2 4.8 a t j = 25c t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) 10lb in (1.1n m)

2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) starting t j = 25c, l = 93mh, r g = 25 , i as = 1.8a. (see figure 13). i sd = 3.6a, di/dt 520a/ s, v dd v (br)dss , t j 150c. pulse width 300 s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . c oss eff.(er) is a fixed capacitance that stores the same energy as c oss while v ds is rising from 0 to 80% v dss .

static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 500 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.37 ??? v/c r ds(on) static drain-to-source on-resistance ??? 1.75 2.2 v gs(th) gate threshold voltage 3.0 ??? 5.0 v i dss drain-to-source leakage current ??? ??? 25 a ??? ??? 2.0 ma i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 dynamic @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units gfs forward transconductance 7.6 ??? ??? s q g total gate charge ??? ??? 20 q gs gate-to-source charge ??? ??? 7.3 nc q gd gate-to-drain ("miller") charge ??? ??? 7.1 t d(on) turn-on delay time ??? 14 ??? t r rise time ???22???ns t d ( off ) turn-off delay time ??? 24 ??? t f fall time ???17??? c iss input capacitance ??? 810 ??? c oss output capacitance ??? 47 ??? c rss reverse transfer capacitance ??? 7.3 ??? c oss output capacitance ??? 610 ??? pf v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 16 ??? v gs = 0v, v ds = 400v, ? = 1.0mh z c oss eff. effective output capacitance ??? 5.9 ??? c oss eff. (er) effective output capacitance ??? 37 ??? (energy related) avalanche characteristics symbol parameter typ. units e as single pulse avalanche energy ??? mj i ar avalanche current ??? a e ar repetitive avalanche energy ??? mj thermal resistance symbol parameter typ. units r jc junction-to-case ??? r cs case-to-sink, flat, greased surface 0.5 c/w r ja junction-to-ambient ??? v ds = v gs , i d = 250 a v ds = 500v, v gs = 0v v ds = 400v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250 a reference to 25c, i d = 250 a v gs = 10v, i d = 2.2a v gs = 20v conditions v ds = 50v, i d = 2.2a v gs = -20v i d = 3.6a v ds = 400v v gs = 10v, see fig.14a &14b v dd = 250v i d = 3.6a r g = 17 v gs = 10v, see fig. 15a & 15b v gs = 0v v ds = 25v ? = 1.0mhz, see fig. 5 1.8 7.8 max. 150 v gs = 0v,v ds = 0v to 400v 62 max. 1.6 ???

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 6.2v 5.9v 5.8v 5.6v 5.5v bottom 5.3v 60 s pulse width tj = 25c 5.3v 4 5 6 7 8 v gs , gate-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 50v 60 s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 3.6a v gs = 10v 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 6.2v 5.9v 5.8v 5.6v 5.5v bottom 5.3v 60 s pulse width tj = 150c 5.3v

4 www.irf.com fig 5. typical capacitance vs. drain-to-source voltage fig 6. typ. breadown voltage vs. temperature 1 10 100 1000 v ds , drain-to-source voltage (v) 1 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0.2 0.4 0.6 0.8 1.0 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 500 550 600 650 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 250ua 0 4 8 12 16 q g total gate charge (nc) 0 4 8 12 16 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 400v v ds = 250v v ds = 100v i d = 3.6a

www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 t c , casetemperature (c) 0 1 2 3 4 i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 01234567 i d , drain current (a) 1.5 2.0 2.5 3.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ) v gs = 10v v gs = 20v fig 9. typical rdson vs. drain current

6 www.irf.com fig 13. maximum avalanche energy vs. drain current fig 12. maximum safe operating area 25 50 75 100 125 150 starting t j , junction temperature (c) 0 100 200 300 400 500 600 700 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 0.4a 0.7a bottom 1.8a fig 14a. gate charge test circuit fig 14b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s fig 13b. unclamped inductive waveforms fig 13a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc

www.irf.com 7 fig 16.

for n-channel hexfet power mosfets
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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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fig 15a. switching time test circuit fig 15b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f ( ) 1 * % 0.1 ! " + -

8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 06/11

note: for the most current drawing please refer to ir website at http://www .irf.com/package/ to-220ab packages are not recommended for surface mount application. int ernat ional part number rectifier lot code assembly logo ye ar 0 = 2000 dat e code week 19 line c lot code 1789 example: this is an irf1010 note: "p" in as sembly line position i ndi cates " l ead - f r ee" in the assembly line "c" as s e mb le d on ww 19, 2000
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